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Gate voltage dependence of reliability for ultra-thin oxides

dc.contributor.authorNigam, Tanya
dc.contributor.authorDepas, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-09-30T09:20:55Z
dc.date.available2021-09-30T09:20:55Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2056
dc.sourceIIOimport
dc.titleGate voltage dependence of reliability for ultra-thin oxides
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage90
dc.source.endpage91
dc.source.conferenceProceedings of the Solid State Devices and Materials Conference - SSDM
dc.source.conferencedate16/09/1997
dc.source.conferencelocationHamamatsu Japan
imec.availabilityPublished - open access


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