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Ultralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatment

dc.contributor.authorDeng, Shaoren
dc.contributor.authorXie, Qi
dc.contributor.authorSchaekers, Marc
dc.contributor.authorLin, Dennis
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan den Berghe, Sven
dc.contributor.authorQu, Xinping
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDetavernier, Christophe
dc.date.accessioned2021-10-20T10:39:42Z
dc.date.available2021-10-20T10:39:42Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20587
dc.sourceIIOimport
dc.titleUltralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatment
dc.typeMeeting abstract
dc.contributor.imecauthorDeng, Shaoren
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageO5-01
dc.source.conferenceMaterials for Advanced Metallization - MAM
dc.source.conferencedate11/03/2012
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - open access


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