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SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study

dc.contributor.authorEneman, Geert
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorVincent, Benjamin
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T10:54:24Z
dc.date.available2021-10-20T10:54:24Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20653
dc.sourceIIOimport
dc.titleSiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conferenceInternational Solid-State Devices and Materials Conference - SSDM
dc.source.conferencedate25/09/2012
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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