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Intrinsic switching behavior in HfO2 RRAM by fast electrical measurments on novel 2R test structures

dc.contributor.authorFantini, Andrea
dc.contributor.authorWouters, Dirk
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorChen, Yangyin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKittl, Jorge
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-20T10:58:08Z
dc.date.available2021-10-20T10:58:08Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20668
dc.sourceIIOimport
dc.titleIntrinsic switching behavior in HfO2 RRAM by fast electrical measurments on novel 2R test structures
dc.typeProceedings paper
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage45
dc.source.endpage48
dc.source.conference4th IEEE International Memory Workshop - IMW
dc.source.conferencedate21/04/2012
dc.source.conferencelocationMilano Italy
imec.availabilityPublished - open access


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