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Nano-beam diffraction investigation of the strain evolution in SiGe channel pFETs with gate first or gate last process

dc.contributor.authorFavia, Paola
dc.contributor.authorEneman, Geert
dc.contributor.authorYamaguchi, Shinpei
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-20T10:58:45Z
dc.date.available2021-10-20T10:58:45Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20671
dc.sourceIIOimport
dc.titleNano-beam diffraction investigation of the strain evolution in SiGe channel pFETs with gate first or gate last process
dc.typeOral presentation
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewno
dc.source.conference15th European Microscopy Congress
dc.source.conferencedate16/09/2012
dc.source.conferencelocationManchester UK
imec.availabilityPublished - imec
imec.internalnotes


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