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Reliability of SiGe Channel MOS

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorMitard, Jerome
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHellings, Geert
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGrasser, T.
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T11:03:49Z
dc.date.available2021-10-20T11:03:49Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20690
dc.sourceIIOimport
dc.titleReliability of SiGe Channel MOS
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage177
dc.source.endpage195
dc.source.conferenceSiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 50, Iss. 9


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