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Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorRoussel, Philippe
dc.contributor.authorMitard, Jerome
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorChiarella, Thomas
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBukhori, M.F.
dc.contributor.authorGrasser, T.
dc.contributor.authorAsenov, A.
dc.date.accessioned2021-10-20T11:04:24Z
dc.date.available2021-10-20T11:04:24Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20692
dc.sourceIIOimport
dc.titleImpact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5A-4
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate15/04/2012
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - open access


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