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On the characterization of the strain field of lattice defects in silicon with nanometer resolution

dc.contributor.authorJanssens, Koenraad
dc.contributor.authorVan der Biest, O.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T12:42:27Z
dc.date.available2021-09-29T12:42:27Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/206
dc.sourceIIOimport
dc.titleOn the characterization of the strain field of lattice defects in silicon with nanometer resolution
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage22
dc.source.endpage24
dc.source.conferenceDefect Recognition and Image Processing in Semiconductors and Devices; 6-10 Sept. 1993; Santander, Spain.
imec.availabilityPublished - imec


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