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Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering

dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorChen, Yangyin
dc.contributor.authorJossart, Nico
dc.contributor.authorDegraeve, Robin
dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorLorenzo, G.
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorWouters, Dirk
dc.contributor.authorKittl, Jorge
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-20T11:17:17Z
dc.date.available2021-10-20T11:17:17Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20742
dc.sourceIIOimport
dc.titleUltralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorJossart, Nico
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage159
dc.source.endpage160
dc.source.conferenceSymposium on VLSI Technology - VLSIT
dc.source.conferencedate12/06/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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