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Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering

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1878 since deposited on 2021-10-20
Acq. date: 2026-02-25

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1878 since deposited on 2021-10-20
Acq. date: 2026-02-25

Citations