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Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering
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Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering
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