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Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering
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Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering
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Date
2012
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Goux, Ludovic
;
Fantini, Andrea
;
Kar, Gouri Sankar
;
Chen, Yangyin
;
Jossart, Nico
;
Degraeve, Robin
;
Clima, Sergiu
;
Govoreanu, Bogdan
;
Lorenzo, G.
;
Pourtois, Geoffrey
;
Wouters, Dirk
;
Kittl, Jorge
;
Altimime, Laith
;
Jurczak, Gosia
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Views
1876
since deposited on 2021-10-20
5
last month
Acq. date: 2025-12-15
Citations