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On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs

dc.contributor.authorGrasser, Tibor
dc.contributor.authorReisinger, Hans
dc.contributor.authorRott, Karina
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-20T11:19:47Z
dc.date.available2021-10-20T11:19:47Z
dc.date.issued2012-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20751
dc.sourceIIOimport
dc.titleOn the microscopic origin of the frequency dependence of hole trapping in pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage19.6
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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