Show simple item record

ESD characterization of high mobility SiGe quantum well and Ge devices for future CMOS scaling

dc.contributor.authorHellings, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorZografos, Odysseas
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T11:33:20Z
dc.date.available2021-10-20T11:33:20Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20798
dc.sourceIIOimport
dc.titleESD characterization of high mobility SiGe quantum well and Ge devices for future CMOS scaling
dc.typeProceedings paper
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorZografos, Odysseas
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecZografos, Odysseas::0000-0002-9998-8009
dc.source.peerreviewyes
dc.source.beginpage37
dc.source.endpage42
dc.source.conferenceReliability Center Of Japan Symposium
dc.source.conferencedate30/10/2012
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record