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An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorVanherle, Wendy
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-20T11:38:28Z
dc.date.available2021-10-20T11:38:28Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20816
dc.sourceIIOimport
dc.titleAn investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors
dc.typeMeeting abstract
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conferenceInternational Silicon-Germanium Technology and Device Meeting
dc.source.conferencedate4/06/2012
dc.source.conferencelocationBerkeley, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06222512
imec.availabilityPublished - imec


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