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Junction strategies for 1x nm technology node with FINFET and high mobility channel

dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorZschaetzsch, Gerd
dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorKambham, Ajay Kumar
dc.contributor.authorDouhard, Bastien
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorHellings, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorNoda, Taiji
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T11:40:18Z
dc.date.available2021-10-20T11:40:18Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20822
dc.sourceIIOimport
dc.titleJunction strategies for 1x nm technology node with FINFET and high mobility channel
dc.typeProceedings paper
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage216
dc.source.endpage221
dc.source.conference12th International Workshop on Junction Technology - IWJT
dc.source.conferencedate14/05/2012
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec


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