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Analysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs

dc.contributor.authorItocazu, V.T.
dc.contributor.authorSonnenberg, V.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-20T11:48:42Z
dc.date.available2021-10-20T11:48:42Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20850
dc.sourceIIOimport
dc.titleAnalysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage511
dc.source.endpage517
dc.source.conferenceProceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate30/08/2012
dc.source.conferencelocationBrasilia Brazil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 49, Issue 1


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