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Understanding of trap-assisted tunneling current - assisted by oxygen vacancies in RuOx/SrTiO3/TiN MIM capacitor for the DRAM Application

dc.contributor.authorKim, Min-Soo
dc.contributor.authorKaczer, Ben
dc.contributor.authorStarschich, Sergej
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorSwerts, Johan
dc.contributor.authorRichard, Olivier
dc.contributor.authorTomida, Kazuyuki
dc.contributor.authorVrancken, Christa
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDebusschere, Ingrid
dc.contributor.authorAltimime, Laith
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-20T12:16:49Z
dc.date.available2021-10-20T12:16:49Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20938
dc.sourceIIOimport
dc.titleUnderstanding of trap-assisted tunneling current - assisted by oxygen vacancies in RuOx/SrTiO3/TiN MIM capacitor for the DRAM Application
dc.typeProceedings paper
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorTomida, Kazuyuki
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDebusschere, Ingrid
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage103
dc.source.endpage106
dc.source.conference4th IEEE International Memory Workshop - IMW
dc.source.conferencedate20/05/2012
dc.source.conferencelocationMilano Italy
imec.availabilityPublished - open access


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