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Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment

dc.contributor.authorLiang, Hu
dc.contributor.authorCarlson, Eric
dc.contributor.authorZhao, Ming
dc.contributor.authorBorniquel, Jose
dc.contributor.authorKang, SangWang
dc.contributor.authorJun, Sungwon
dc.contributor.authorRosseel, Erik
dc.contributor.authorL'abbe, Caroline
dc.contributor.authorDekoster, Johan
dc.date.accessioned2021-10-20T12:46:03Z
dc.date.available2021-10-20T12:46:03Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21025
dc.sourceIIOimport
dc.titleReduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment
dc.typeMeeting abstract
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorDekoster, Johan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.source.peerreviewyes
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate14/10/2012
dc.source.conferencelocationSapporo Japan
imec.availabilityPublished - imec


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