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Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorGupta, S.
dc.contributor.authorYang, B.
dc.contributor.authorBury, Erik
dc.contributor.authorSioncke, Sonja
dc.contributor.authorDegraeve, Robin
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKrom, Raymond
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorSaraswat, K.C.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T12:48:30Z
dc.date.available2021-10-20T12:48:30Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21032
dc.sourceIIOimport
dc.titleBeyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage28.3
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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