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A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

dc.contributor.authorMeneghini, M.
dc.contributor.authorBertin, M.
dc.contributor.authorDal Santo, G.
dc.contributor.authorStocco, A.
dc.contributor.authorChini, A.
dc.contributor.authorMarcon, Denis
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMura, G.
dc.contributor.authorMusu, E.
dc.contributor.authorVanzi, M.
dc.contributor.authorMeneghesso, G.
dc.contributor.authorZanoni, E.
dc.date.accessioned2021-10-20T13:26:26Z
dc.date.available2021-10-20T13:26:26Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21133
dc.sourceIIOimport
dc.titleA novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.source.peerreviewyes
dc.source.beginpage13.3
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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