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85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorHellings, Geert
dc.contributor.authorPantisano, Luigi
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorEyben, Pierre
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T13:35:24Z
dc.date.available2021-10-20T13:35:24Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21156
dc.sourceIIOimport
dc.title85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecEyben, Pierre::0000-0003-3686-556X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage163
dc.source.endpage164
dc.source.conferenceSymposium on VLSI Technology - VLSIT
dc.source.conferencedate12/06/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec


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