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Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach

dc.contributor.authorNoda, Taiji
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHellings, Geert
dc.contributor.authorVrancken, Christa
dc.contributor.authorEyben, Pierre
dc.contributor.authorThean, Aaron
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-20T13:56:49Z
dc.date.available2021-10-20T13:56:49Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21209
dc.sourceIIOimport
dc.titleAnalysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage30.2
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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