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Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition

dc.contributor.authorRampelberg, Geert
dc.contributor.authorSchaekers, Marc
dc.contributor.authorMartens, Koen
dc.contributor.authorXie, Qi
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDe Schutter, Bob
dc.contributor.authorBlasco, Nicolas
dc.contributor.authorKittl, Jorge
dc.contributor.authorDetavernier, Christophe
dc.date.accessioned2021-10-20T15:07:11Z
dc.date.available2021-10-20T15:07:11Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21378
dc.sourceIIOimport
dc.titleSemiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition
dc.typeMeeting abstract
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorXie, Qi
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageO7-02
dc.source.conferenceMaterials for Advanced Metallization - MAM
dc.source.conferencedate11/03/2012
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - open access


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