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Articles
HfSiO bulk trap density controls the initial Vth in nMOSFETs
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HfSiO bulk trap density controls the initial Vth in nMOSFETs
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Date
2012-06
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25043.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sahhaf, Sahar
;
Degraeve, Robin
;
Srividya, Vydia
;
De Brabanter, K.
;
Schram, Tom
;
Gilbert, Matthieu
;
Vandervorst, Wilfried
;
Groeseneken, Guido
Journal
IEEE Transactions on Device and Materials Reliability
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1945
since deposited on 2021-10-20
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Acq. date: 2026-01-07
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Metrics
Views
1945
since deposited on 2021-10-20
1
last month
Acq. date: 2026-01-07
Citations