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Extraction of accurate lifetime and doping profiles in Si p-n junction diodes

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCzerwinski, A.
dc.contributor.authorTomaszewski, D.
dc.contributor.authorGibki, J.
dc.contributor.authorBakowski, A.
dc.contributor.authorKatcki, J.
dc.date.accessioned2021-09-30T09:32:53Z
dc.date.available2021-09-30T09:32:53Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2144
dc.sourceIIOimport
dc.titleExtraction of accurate lifetime and doping profiles in Si p-n junction diodes
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageCM35
dc.source.conferenceBelgische Natuurkundige Vereniging / Société Belge de Physique : General Scientific Meeting
dc.source.conferencedate29/05/1997
dc.source.conferencelocationDiepenbeek Belgium
imec.availabilityPublished - imec


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