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Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
Publication:
Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
Date
2012
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Togo, Mitsuhiro
;
Lee, Jae Woo
;
Pantisano, Luigi
;
Chiarella, Thomas
;
Ritzenthaler, Romain
;
Krom, Raymond
;
Hikavyy, Andriy
;
Loo, Roger
;
Rosseel, Erik
;
Brus, Stephan
;
Maes, J.W.
;
Machkaoutsan, Vladimir
;
Tolle, J.
;
Eneman, Geert
;
De Keersgieter, An
;
Boccardi, Guillaume
;
Mannaert, Geert
;
Altamirano Sanchez, Efrain
;
Locorotondo, Sabrina
;
Demand, Marc
;
Horiguchi, Naoto
;
Thean, Aaron
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Downloads
1
since deposited on 2021-10-20
Acq. date: 2025-10-25
Views
1891
since deposited on 2021-10-20
432
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations