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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorTang, B.
dc.contributor.authorRoussel, Philippe
dc.contributor.authorWeckx, Pieter
dc.contributor.authorFranco, Jacopo
dc.contributor.authorArreghini, Antonio
dc.contributor.authorSuhane, Amit
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-20T16:59:18Z
dc.date.available2021-10-20T16:59:18Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21616
dc.sourceIIOimport
dc.titleQuantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage902
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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