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Strain relaxation and distribution in GaN nanopillars using in-plane X-ray diffraction

dc.contributor.authorTseng, Peter
dc.contributor.authorDillemans, Leander
dc.contributor.authorGonzalez, Mario
dc.contributor.authorCheng, Kai
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorLieten, Ruben
dc.date.accessioned2021-10-20T17:11:39Z
dc.date.available2021-10-20T17:11:39Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21640
dc.sourceIIOimport
dc.titleStrain relaxation and distribution in GaN nanopillars using in-plane X-ray diffraction
dc.typeMeeting abstract
dc.contributor.imecauthorDillemans, Leander
dc.contributor.imecauthorGonzalez, Mario
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorLieten, Ruben
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium W: Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III
dc.source.conferencedate14/05/2012
dc.source.conferencelocationStrasburg France
imec.availabilityPublished - imec


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