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Secondary ion signal variation during oxygen build-up in Si

dc.contributor.authorTian, Chunsheng
dc.contributor.authorBeyer, Gerald
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorKilner, J. A.
dc.date.accessioned2021-09-30T09:39:24Z
dc.date.available2021-09-30T09:39:24Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2179
dc.sourceIIOimport
dc.titleSecondary ion signal variation during oxygen build-up in Si
dc.typeProceedings paper
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage287
dc.source.endpage290
dc.source.conferenceSecondary Ion Mass Spectrometry - SIMS X : Proceedings of the 10th International Conference
dc.source.conferencedate2/10/1995
dc.source.conferencelocationMünster Germany
imec.availabilityPublished - imec


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