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CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices

dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorKumar, Arul
dc.contributor.authorVantomme, Andre
dc.contributor.authorMerckling, Clement
dc.contributor.authorLin, Dennis
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-20T18:35:36Z
dc.date.available2021-10-20T18:35:36Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21804
dc.sourceIIOimport
dc.titleCVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conference6th International Silicon- Germanium Technology and Device Meeting - ISTDM
dc.source.conferencedate4/06/2012
dc.source.conferencelocationBerkeley, CA USA
imec.availabilityPublished - imec


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