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Selective growth of strained GE channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and Fin pFET

dc.contributor.authorVincent, Benjamin
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorRichard, Olivier
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T18:37:11Z
dc.date.available2021-10-20T18:37:11Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21807
dc.sourceIIOimport
dc.titleSelective growth of strained GE channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and Fin pFET
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage39
dc.source.endpage45
dc.source.conferenceSiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, Hi USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 50, Iss. 9


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