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Electron trap energy distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 layers on silicon

dc.contributor.authorWang, Mugwort
dc.contributor.authorBadylevich, M.
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorSwerts, Johan
dc.contributor.authorKittl, Jorge
dc.contributor.authorAfanasiev, Valeri
dc.date.accessioned2021-10-20T18:52:09Z
dc.date.available2021-10-20T18:52:09Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21837
dc.sourceIIOimport
dc.titleElectron trap energy distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 layers on silicon
dc.typeProceedings paper
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage12008
dc.source.conferenceE-MRS Spring Meeting Symposium M: More than Moore: Novel Materials Approaches for Functionalized Silicon Based Microelectronics
dc.source.conferencedate14/05/2012
dc.source.conferencelocationStrasbourg France
dc.identifier.urlhttp://iopscience.iop.org/1757-899X/41/1/012008
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 41


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