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Differential interference contrast microscopy of defects in As-grown and annealed Si wafers

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorLambert, U.
dc.contributor.authorGräf, D.
dc.contributor.authorKenis, Karine
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-30T09:40:23Z
dc.date.available2021-09-30T09:40:23Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2184
dc.sourceIIOimport
dc.titleDifferential interference contrast microscopy of defects in As-grown and annealed Si wafers
dc.typeProceedings paper
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage387
dc.source.endpage392
dc.source.conferenceProceedings of the 7th International Autumn Meeting : Gettering and Defect Engineering in Semiconductor Technology - GADEST '97
dc.source.conferencedate5/10/1997
dc.source.conferencelocationSpa Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena. Vols. 57-58


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