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Forward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications

dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorZahid, Mohammed
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorStoffels, Steve
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T19:06:18Z
dc.date.available2021-10-20T19:06:18Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21864
dc.sourceIIOimport
dc.titleForward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications
dc.typeMeeting abstract
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conferenceWorkshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate28/05/2012
dc.source.conferencelocationIsland of Porquerolles France
imec.availabilityPublished - imec
imec.internalnotesA book containing all the extended abstracts will be published by CRHEA-CNRS and distributed to all the participants during the conference. The electronic version will be published on-line


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