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Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions

dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorStocco, Antonio
dc.contributor.authorMarcon, Denis
dc.contributor.authorBertin, Marco
dc.contributor.authorSilvestri, Riccardo
dc.contributor.authorFerretti, Marco
dc.contributor.authorRampazzo, Fabiana
dc.contributor.authorMeneghesso, Gaudenzio
dc.date.accessioned2021-10-20T19:30:20Z
dc.date.available2021-10-20T19:30:20Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21909
dc.sourceIIOimport
dc.titleDegradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.source.peerreviewyes
dc.source.conference6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components
dc.source.conferencedate8/10/2012
dc.source.conferencelocationNoordwijk The Netherlands
imec.availabilityPublished - imec


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