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Plasma influence on the attenuation of line width roughness of EUV photoresist lines ranging from 40 to 22 nm half pitch

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorDe Schepper, Peter
dc.contributor.authorHansen, Terje
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-21T06:42:21Z
dc.date.available2021-10-21T06:42:21Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21966
dc.sourceIIOimport
dc.titlePlasma influence on the attenuation of line width roughness of EUV photoresist lines ranging from 40 to 22 nm half pitch
dc.typeOral presentation
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Schepper, Peter
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.conferenceSPIE Advanced Lithography Conference
dc.source.conferencedate24/02/2013
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - imec


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