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Challenges for smoothing EUV photoresist line-width-roughness: plasma treatment from 40 to 22 nm half pitches
Publication:
Challenges for smoothing EUV photoresist line-width-roughness: plasma treatment from 40 to 22 nm half pitches
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Date
2013
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Altamirano Sanchez, Efrain
;
De Schepper, Peter
;
Hansen, Terje
;
Boullart, Werner
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1952
since deposited on 2021-10-21
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last month
Acq. date: 2025-12-11
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Metrics
Views
1952
since deposited on 2021-10-21
2
last month
Acq. date: 2025-12-11
Citations