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Challenges for smoothing EUV photoresist line-width-roughness: plasma treatment from 40 to 22 nm half pitches

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorDe Schepper, Peter
dc.contributor.authorHansen, Terje
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-21T06:42:22Z
dc.date.available2021-10-21T06:42:22Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21967
dc.sourceIIOimport
dc.titleChallenges for smoothing EUV photoresist line-width-roughness: plasma treatment from 40 to 22 nm half pitches
dc.typeOral presentation
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Schepper, Peter
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.conferenceChina Semiconductor Technology International Conference (CSTIC) 2013
dc.source.conferencedate17/03/2013
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec


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