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Oxygen in Si epitaxial growth: from interface contamination to Si/O superlattice engineering

dc.contributor.authorCaymax, Matty
dc.contributor.authorJayachandran, Suseendran
dc.contributor.authorLu, Augustin
dc.contributor.authorDelabie, Annelies
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-21T06:53:23Z
dc.date.available2021-10-21T06:53:23Z
dc.date.issued2013-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22108
dc.sourceIIOimport
dc.titleOxygen in Si epitaxial growth: from interface contamination to Si/O superlattice engineering
dc.typeMeeting abstract
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorJayachandran, Suseendran
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.conferenceJSPS Core-to-Core Program Seminar on 'Atomically Controlled Processing for ULSI'
dc.source.conferencedate6/06/2013
dc.source.conferencelocationKyushu Japan
imec.availabilityPublished - imec


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