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Low frequency noise performance of gate-first and replacement metal gate CMOS technologies

dc.contributor.authorClaeys, Cor
dc.contributor.authorLee, Jae Woo
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorParaschiv, Vasile
dc.date.accessioned2021-10-21T07:00:11Z
dc.date.available2021-10-21T07:00:11Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22155
dc.sourceIIOimport
dc.titleLow frequency noise performance of gate-first and replacement metal gate CMOS technologies
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage2
dc.source.conferenceIEEE International Conference on Electron Devices and Solid-State Circuits - EDSSC
dc.source.conferencedate3/06/2013
dc.source.conferencelocationHong Kong Hong Kong
imec.availabilityPublished - open access


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