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Negative bias temperature instabilities in SiGe-pMOSFETs with SiO2/HfO2 gate dielectrics

dc.contributor.authorDuan, G.X
dc.contributor.authorZhang, C. X.
dc.contributor.authorZhang, E.X.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorSchrimpf, R.D
dc.contributor.authorReed, R. A.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.date.accessioned2021-10-21T07:23:50Z
dc.date.available2021-10-21T07:23:50Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22285
dc.sourceIIOimport
dc.titleNegative bias temperature instabilities in SiGe-pMOSFETs with SiO2/HfO2 gate dielectrics
dc.typeMeeting abstract
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference44th IEEE Semcionductor Interface Specialists Conference - SISC
dc.source.conferencedate5/12/2013
dc.source.conferencelocationArlington, VA USA
imec.availabilityPublished - open access


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