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dc.contributor.authorDuan, M.
dc.contributor.authorZhang, J. F.
dc.contributor.authorJi, Z.
dc.contributor.authorMa, J. G.
dc.contributor.authorZhang, W.
dc.contributor.authorKaczer, Ben
dc.contributor.authorSchram, Tom
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorAsenov, A.
dc.date.accessioned2021-10-21T07:24:04Z
dc.date.available2021-10-21T07:24:04Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22286
dc.sourceIIOimport
dc.titleKey issues and techniques for characterizing time-dependent device-to-device variation of SRAM
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.source.peerreviewyes
dc.source.beginpage774
dc.source.endpage777
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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