dc.contributor.author | Duan, M. | |
dc.contributor.author | Zhang, J. F. | |
dc.contributor.author | Ji, Z. | |
dc.contributor.author | Ma, J. G. | |
dc.contributor.author | Zhang, W. | |
dc.contributor.author | Kaczer, Ben | |
dc.contributor.author | Schram, Tom | |
dc.contributor.author | Ritzenthaler, Romain | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Asenov, A. | |
dc.date.accessioned | 2021-10-21T07:24:04Z | |
dc.date.available | 2021-10-21T07:24:04Z | |
dc.date.issued | 2013 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/22286 | |
dc.source | IIOimport | |
dc.title | Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Kaczer, Ben | |
dc.contributor.imecauthor | Schram, Tom | |
dc.contributor.imecauthor | Ritzenthaler, Romain | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
dc.contributor.orcidimec | Schram, Tom::0000-0003-1533-7055 | |
dc.contributor.orcidimec | Ritzenthaler, Romain::0000-0002-8615-3272 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 774 | |
dc.source.endpage | 777 | |
dc.source.conference | International Electron Devices Meeting - IEDM | |
dc.source.conferencedate | 9/12/2013 | |
dc.source.conferencelocation | Washington, DC USA | |
imec.availability | Published - imec | |