Publication:

SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study

Date

2013-04

Journal article

https://doi.org/10.7567/JJAP.52.04CC01

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Author(s)

;

De Keersgieter, An

;

Witters, Liesbeth

;

;

Vincent, Benjamin

;

Hikavyy, Andriy

;

;

Horiguchi, Naoto

;

Collaert, Nadine

;

Journal

Japanese Journal of Applied Physics

Statistics

1789 since deposited on 2021-10-21

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Acq. date: 2026-02-25