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Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS

dc.contributor.authorGupta, Somya
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVrielinck, Henk
dc.contributor.authorMerckling, Clement
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-21T08:04:16Z
dc.date.available2021-10-21T08:04:16Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22444
dc.sourceIIOimport
dc.titleIdentification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage251
dc.source.endpage258
dc.source.conferenceGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
dc.source.conferencedate12/05/2013
dc.source.conferencelocationToronto Canada
dc.identifier.urlhttp://ecst.ecsdl.org/content/53/1/251.full.pdf+html
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 53; Issue 3


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