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Towards manufacturing a 10nm node device with complementary EUV lithography

dc.contributor.authorHermans, Jan
dc.contributor.authorDai, Huixiong
dc.contributor.authorNiroomand, Ardavan
dc.contributor.authorLaidler, David
dc.contributor.authorMao, Ming
dc.contributor.authorChen, Yongmei
dc.contributor.authorLeray, Philippe
dc.contributor.authorNgai, Chris
dc.contributor.authorCheng, Shaunee
dc.date.accessioned2021-10-21T08:15:05Z
dc.date.available2021-10-21T08:15:05Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22483
dc.sourceIIOimport
dc.titleTowards manufacturing a 10nm node device with complementary EUV lithography
dc.typeProceedings paper
dc.contributor.imecauthorHermans, Jan
dc.contributor.imecauthorLaidler, David
dc.contributor.imecauthorMao, Ming
dc.contributor.imecauthorLeray, Philippe
dc.contributor.orcidimecHermans, Jan::0000-0003-1249-8902
dc.contributor.orcidimecLaidler, David::0000-0003-4055-3366
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage86791K
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography IV
dc.source.conferencedate24/02/2013
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 8679


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