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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorVanalme, G. M.
dc.contributor.authorGoubert, L.
dc.contributor.authorCardon, F.
dc.contributor.authorVan Daele, P.
dc.date.accessioned2021-09-30T09:54:09Z
dc.date.available2021-09-30T09:54:09Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2251
dc.sourceIIOimport
dc.titleA ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage619
dc.source.endpage622
dc.source.conferenceMicroscopy of Semiconducting Materials 1997
dc.source.conferencedate7/04/1997
dc.source.conferencelocationOxford UK
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 157


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