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Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices

dc.contributor.authorLieten, Ruben
dc.contributor.authorMaeda, Tatsuro
dc.contributor.authorJevasuwan, Wipakorn
dc.contributor.authorHattori, Hiroyuki
dc.contributor.authorUchida, Noriyuki
dc.contributor.authorMiura, Shu
dc.contributor.authorTanaka, Masatoshi
dc.contributor.authorSeo, Jin Won
dc.contributor.authorLocquet, Jean-Pierre
dc.date.accessioned2021-10-21T09:24:41Z
dc.date.available2021-10-21T09:24:41Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22698
dc.sourceIIOimport
dc.titleTensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices
dc.typeProceedings paper
dc.contributor.imecauthorLieten, Ruben
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1202
dc.source.endpage1203
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate24/09/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - open access


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