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Stress and wafer warpage analysis of GaN thin film induced by transfer bonding process on 200mm Si substrate

dc.contributor.authorLofrano, Melina
dc.contributor.authorPham, Nga
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorSoussan, Philippe
dc.date.accessioned2021-10-21T09:32:05Z
dc.date.available2021-10-21T09:32:05Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22719
dc.sourceIIOimport
dc.titleStress and wafer warpage analysis of GaN thin film induced by transfer bonding process on 200mm Si substrate
dc.typeProceedings paper
dc.contributor.imecauthorLofrano, Melina
dc.contributor.imecauthorPham, Nga
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorSoussan, Philippe
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecSoussan, Philippe::0000-0002-1347-6978
dc.source.peerreviewyes
dc.source.conference14th Int. Conf on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsyst. - EuroSimE
dc.source.conferencedate15/04/2013
dc.source.conferencelocationWroclaw Poland
imec.availabilityPublished - imec


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