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Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop

dc.contributor.authorMarcon, Denis
dc.contributor.authorViaene, John
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorKang, Xuanwu
dc.contributor.authorLenci, Silvia
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-21T09:47:45Z
dc.date.available2021-10-21T09:47:45Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22761
dc.sourceIIOimport
dc.titleReliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage249
dc.source.endpage254
dc.source.conference20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate15/07/2013
dc.source.conferencelocationSuzhou China
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6599162&queryText%3DReliability+of+AlGaN%2FGaN+HEMTs%3A+permanent
imec.availabilityPublished - open access


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